HMC784AMS8GETR

HMC784AMS8GE is a high power SPDT switch. It is used in transmit-receive applications which require very low distortion at high input signal power levels. This device can control signals from DC to 4GHz. The design provides exceptional intermodulation performance; <gt/> +60 dBm third order intercept at +5V bias. RF1 and RF2 are reflective shorts when “OFF”. On-chip circuitry allows single positive supply operation from +3Vdc to +8Vdc at very low DC current with control inputs compatible with CMOS logic families. It is widely used in applications such as cellular/4G infrastructure, WiMAX, WiBro & fixed wireless, automotive telematics, mobile radio, test equipment etc.

• Insertion loss is 0.3dB typical at (DC - 1GHz, TA = +25°C, Vctl = 0/Vdd, Vdd = +5V)
• Isolation is 28dB typical at (DC - 4GHz, TA = +25°C, Vctl = 0/Vdd, Vdd = +5V)
• Return loss (on state) is 30dB typical at (DC - 1GHz, TA = +25°C, Vctl = 0/Vdd, Vdd = +5V)
• Input power for 0.1dB compression is 31dBm typical at (1GHz - 4GHz, TA = +25°C)
• Input third order intercept is 61dBm typical at (0.02GHz - 0.1GHz, TA = +25°C)
• Switching characteristics is 82ns typical at (DC - 4GHz, TA = +25°C, Vctl = 0/Vdd, Vdd = +5V)
• Operating temperature is -40°C to +85°C
• Package style is MSOP8G

Remarques

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party