
| Quantité | Prix |
|---|---|
| 1+ | 47,070 $ |
Informations produit
Aperçu du produit
KITDRIVER1EDN7512BTOBO1 is an evaluation kit for EiceDRIVER™ 1EDN7512B single-channel low-side gate driver IC. This evaluation kit provides a test platform for Infineon's single-channel non-isolated gate driver IC EiceDRIVER™ 1EDN7512B in SOT-23 5-pin package. The complete driving circuitry is integrated into the board to allow a simple and practical step-by-step discovery of the 1EDN7512B characteristics and to evaluate the influence of the surrounding driving circuitry on the signal delivered to the load. For this, a CoolMOS™ superjunction MOSFET or an OptiMOS™ power MOSFET solution from Infineon can be selected. Complete and easy-to-use solution platform, integrating Infineon’s EiceDRIVER™ 1EDN7512B gate driver IC and CoolMOS™ SJ MOSFET or OptiMOS™ power MOSFET. Targeted for SMPS, power supplies and industrial, switched-mode power supplies (SMPS) applications.
- Possible to evaluate the influence of the gate load (Rg or Cgs) on the driving behavior
- Easy to replace and test different power MOSFETs in TO-220 package
- Familiarize with the Infineon’s EiceDRIVER™ 1EDN7512B features
- Understanding the influence of the gate load on the driving behavior
- Supply voltage range from 4.5 to 20V
- Frequency range from 100KHz to 200KHz
Contenu
Gate driver IC EiceDRIVER™ (1EDN7512B), Heatsink for TO-220 MOSFET.
Spécifications techniques
Infineon
Power Management
Evaluation Board 1EDN7512B
No SVHC (25-Jun-2025)
1EDN7512B
MOSFET Gate Driver
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Documents techniques (1)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit
