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Dual MOSFETs :
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Power Dissipation N Channel
=32.7W
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Channel Type
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Drain Source Voltage Vds N Channel
(2)
Continuous Drain Current Id N Channel
(2)
Drain Source On State Resistance N Channel
(2)
Transistor Case Style
(1)
No. of Pins
(2)
Operating Temperature Max
(2)
Qualification
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Emballage
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | Channel Type | Drain Source Voltage Vds N Channel | Continuous Drain Current Id N Channel | Drain Source On State Resistance N Channel | Transistor Case Style | No. of Pins | Power Dissipation N Channel | Operating Temperature Max | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
16AM8180 RoHS | Each (Supplied on Cut Tape) Bandes découpées | 1+2,300 $ 10+2,020 $ 25+1,840 $ 50+1,700 $ 100+1,460 $ Plus de tarifs | Dual N Channel | 100V | 28A | 0.021ohm | QFN | 8Pins | 32.7W | 150°C | AEC-Q101 | |||||
16AM8180RL RoHS | Each (Supplied on Cut Tape) Mise en bobine | 100+1,460 $ 250+1,320 $ 500+1,180 $ 1000+1,150 $ | - | 100V | 28A | 0.021ohm | - | 8Pins | 32.7W | 150°C | - | |||||
