Dual MOSFETs :
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Tout développer
Fabricant
(2)
Power Dissipation N Channel
=525mW
1
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Channel Type
(2)
Drain Source Voltage Vds N Channel
(2)
Drain Source Voltage Vds
(1)
Continuous Drain Current Id
(1)
Continuous Drain Current Id N Channel
(2)
Drain Source On State Resistance N Channel
(2)
Transistor Case Style
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No. of Pins
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Operating Temperature Max
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Emballage
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(1)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | Channel Type | Drain Source Voltage Vds N Channel | Drain Source Voltage Vds | Continuous Drain Current Id | Continuous Drain Current Id N Channel | Drain Source On State Resistance N Channel | Transistor Case Style | No. of Pins | Power Dissipation N Channel | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each (Supplied on Cut Tape) Bandes découpées | 5+0,648 $ 10+0,411 $ 15+0,377 $ 25+0,342 $ 50+0,307 $ Plus de tarifs | N Channel | 60V | 60V | 340mA | 340mA | 1ohm | SOT-666 | 6Pins | 525mW | 150°C | ||||||
86AK7915 RoHS | NEXPERIA | Each (Supplied on Full Reel) Bobine complète | 4000+0,126 $ 12000+0,108 $ 20000+0,106 $ | N Channel | 60V | - | - | 340mA | 1ohm | SOT-666 | 6Pins | 525mW | 150°C | ||||

