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MOSFET Modules :
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On Resistance Rds(on)
=0.0075ohm
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Channel Type
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Transistor Polarity
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Continuous Drain Current Id
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Drain Source Voltage Vds
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Drain Source On State Resistance
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Rds(on) Test Voltage
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Transistor Mounting
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Gate Source Threshold Voltage Max
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Emballage
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | Channel Type | Transistor Polarity | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Rds(on) Test Voltage | Transistor Case Style | Transistor Mounting | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max | No. of Pins | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS SEMICONDUCTOR | Each | 1+81,070 $ 5+72,760 $ 10+64,440 $ 25+63,560 $ 50+62,280 $ Plus de tarifs | P Channel | P Channel | 210A | 100V | 0.0075ohm | 7500µohm | 10V | - | - | 4.5V | 830W | 830W | 150°C | - | TrenchP Series | |||||
IXYS SEMICONDUCTOR | Each | 1+47,220 $ 5+41,010 $ 10+34,790 $ 25+33,710 $ 50+32,630 $ Plus de tarifs | N Channel | - | 200A | 100V | 0.0075ohm | 7500µohm | 15V | ISOTOP | Module | 5V | 680W | 680W | 175°C | 4Pins | Polar(TM) HiPerFET | |||||
Each | 300+40,510 $ | N Channel | N Channel | 220A | 200V | 0.0075ohm | 0.0075ohm | 10V | - | - | 5V | 1.09kW | 1.09kW | 175°C | - | GigaMOS Series | ||||||
Each | 15+148,250 $ 25+145,280 $ 50+142,310 $ 100+139,360 $ 250+136,390 $ | N Channel | N Channel | 80A | 100V | 0.0075ohm | 0.0075ohm | 10V | - | - | 3.3V | - | - | 150°C | - | - | ||||||
