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MOSFET Modules :
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Fabricant
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Power Dissipation Pd
=1.07kW
1
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(1)
(1)
(1)
(1)
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(1)
(2)
Transistor Polarity
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Channel Type
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Continuous Drain Current Id
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Drain Source Voltage Vds
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On Resistance Rds(on)
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Drain Source On State Resistance
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
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Power Dissipation
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Emballage
(2)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Power Dissipation Pd | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+64,160 $ 5+56,390 $ 10+48,620 $ 25+45,880 $ 50+43,130 $ Plus de tarifs | N Channel | N Channel | 188A | 200V | 0.00105ohm | 0.00105ohm | 10V | 4.5V | 1.07kW | 1.07kW | 175°C | Polar/ HiPerFET Series | ||||||
IXYS SEMICONDUCTOR | Each | 1+53,650 $ 5+46,730 $ 10+39,800 $ 25+38,410 $ 50+37,020 $ Plus de tarifs | N Channel | N Channel | 420A | 100V | 0.0023ohm | 2300µohm | 10V | 5V | 1.07kW | 1.07kW | 175°C | GigaMOS HiperFET Series | |||||
