MOSFET Modules :
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Tout développer
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Power Dissipation
=1.04kW
1
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(1)
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(3)
(3)
Transistor Polarity
(2)
Channel Type
(2)
Continuous Drain Current Id
(1)
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Drain Source Voltage Vds
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On Resistance Rds(on)
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Drain Source On State Resistance
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Rds(on) Test Voltage
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Transistor Case Style
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Emballage
(2)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Rds(on) Test Voltage | Transistor Case Style | Transistor Mounting | Gate Source Threshold Voltage Max | Power Dissipation | Power Dissipation Pd | Operating Temperature Max | No. of Pins | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS SEMICONDUCTOR | Each | 1+77,120 $ 5+67,780 $ 10+58,440 $ 25+56,840 $ 50+55,220 $ Plus de tarifs | N Channel | N Channel | 90A | 500V | 0.049ohm | 0.049ohm | 10V | SOT-227B | Module | 5V | 1.04kW | 1.04kW | 150°C | 4Pins | - | |||||
Each | 300+60,100 $ 600+58,910 $ 900+57,700 $ 1500+56,500 $ 3000+55,290 $ Plus de tarifs | N Channel | N Channel | 145A | 650V | 0.017ohm | 0.017ohm | 10V | - | - | 5V | 1.04kW | 1.04kW | 150°C | - | HiPerFET X2 Series | ||||||

