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Single MOSFETs :
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Power Dissipation Pd
=5.9W
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Transistor Polarity
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Drain Source Voltage Vds
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Emballage
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | Channel Type | Transistor Polarity | Drain Source Voltage Vds | Continuous Drain Current Id | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Power Dissipation Pd | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each (Supplied on Cut Tape) Bandes découpées | 5+2,700 $ 10+1,730 $ 25+1,530 $ 50+1,340 $ 100+1,150 $ | P Channel | P Channel | 30V | 19.2A | 0.0127ohm | 8800µohm | SOIC | Surface Mount | 4.5V | 5.9W | 2.1V | 5.9W | 8Pins | 150°C | - | ||||||
Each (Supplied on Cut Tape) Bandes découpées | 1+3,350 $ 10+2,160 $ 25+1,920 $ 50+1,700 $ | P Channel | P Channel | 150V | 2.8A | 0.245ohm | 0.245ohm | SOIC | Surface Mount | 10V | 5.9W | 4V | 5.9W | 8Pins | 150°C | TrenchFET | ||||||
