Bipolar Junction Transistor Arrays - BJT | Newark Électronique Canada

Réf. fabricant	Code Commande	Fabricant / Description	Prix pour	Prix	Transistor Polarity	Collector Emitter Voltage Max NPN	Collector Emitter Voltage Max PNP	Continuous Collector Current NPN	Continuous Collector Current PNP	Power Dissipation NPN	Power Dissipation PNP	DC Current Gain hFE Min NPN	DC Current Gain hFE Min PNP	Transistor Case Style	No. of Pins	Transistor Mounting	Operating Temperature Max	Transition Frequency NPN

EMX1DXV6T1G	09R9412 Data Sheet RoHS	ONSEMI Bipolar Transistor Array Dual NPN 50 V 100 mA 357 mW	Each (Supplied on Cut Tape) Bandes découpées	12000+0,153 $ 24000+0,151 $	Dual NPN	50V	-	100mA	-	357mW	-	120hFE	-	SOT-563	6Pins	Surface Mount	150°C	180MHz
NSBC114EPDXV6T1G	09R9607 Data Sheet RoHS	ONSEMI Bipolar Transistor Array NPN and PNP Complement 50 V 50 V 100 mA 100 mA 357 mW	Each (Supplied on Cut Tape) Bandes découpées	12000+0,092 $ 24000+0,084 $	NPN and PNP Complement	50V	50V	100mA	100mA	357mW	357mW	35hFE	35hFE	SOT-563	6Pins	Surface Mount	150°C	-
NSBC144EPDXV6T1G	09R9610 Data Sheet RoHS	ONSEMI Bipolar Transistor Array NPN and PNP Complement 50 V 50 V 100 mA 100 mA 357 mW	Each (Supplied on Cut Tape) Bandes découpées	12000+0,121 $ 24000+0,118 $	NPN and PNP Complement	50V	50V	100mA	100mA	357mW	357mW	80hFE	80hFE	SOT-563	6Pins	Surface Mount	150°C	-
NSBC143TPDXV6T1G	09R9609 Data Sheet RoHS	ONSEMI Bipolar Transistor Array NPN and PNP Complement 50 V 50 V 100 mA 100 mA 357 mW	Each (Supplied on Cut Tape) Bandes découpées	12000+0,092 $ 24000+0,085 $	NPN and PNP Complement	50V	50V	100mA	100mA	357mW	357mW	160hFE	160hFE	SOT-563	6Pins	Surface Mount	150°C	-