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Single Bipolar Junction Transistors - BJT :
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Fabricant
(2)
Transistor Case Style
=TO-126N
1
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(12)
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(1)
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(7)
Transistor Polarity
(1)
(1)
Collector Emitter Voltage V(br)ceo
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Collector Emitter Voltage Max
(2)
Continuous Collector Current
(2)
Power Dissipation
(2)
DC Collector Current
(2)
Power Dissipation Pd
(2)
Transistor Mounting
(2)
DC Current Gain hFE
(2)
Emballage
(2)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | Transistor Polarity | Collector Emitter Voltage V(br)ceo | Collector Emitter Voltage Max | Continuous Collector Current | Power Dissipation | DC Collector Current | Power Dissipation Pd | Transistor Case Style | Transistor Mounting | DC Current Gain hFE | No. of Pins | Transition Frequency | DC Current Gain hFE Min | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TOSHIBA | Each | 1+0,883 $ 10+0,725 $ 100+0,520 $ 500+0,463 $ 1000+0,415 $ Plus de tarifs | NPN | 160V | 160V | 1.5A | 10W | 1.5A | 10W | TO-126N | Through Hole | 140hFE | 3Pins | 100MHz | 140hFE | 150°C | |||||
TOSHIBA | Each | 1+0,883 $ 10+0,725 $ 100+0,520 $ 500+0,463 $ 1000+0,415 $ Plus de tarifs | PNP | 160V | 160V | 1.5A | 10W | 1.5A | 10W | TO-126N | Through Hole | 140hFE | 3Pins | 100MHz | 140hFE | 150°C | |||||
