Silicon Carbide (SiC) MOSFETs & Modules | Newark Électronique Canada

Réf. fabricant	Code Commande	Fabricant / Description	Prix pour	Prix	MOSFET Module Configuration	Transistor Polarity	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	On Resistance Rds(on)	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range

FF6MR12KM1HHPSA1	85AK6028 RoHS	INFINEON Silicon Carbide MOSFET Half Bridge Dual N Channel 140 A 1.2 kV 0.0055 ohm Module	Each	1+217,790 $ 5+214,350 $ 10+211,010 $ 25+207,530 $	Half Bridge	-	Dual N Channel	140A	1.2kV	-	0.0055ohm	Module	7Pins	18V	5.15V	-	175°C	62mm C Series
FF6MR12KM1HPHPSA1	85AK6029 RoHS	INFINEON Silicon Carbide MOSFET Half Bridge Dual N Channel 175 A 1.2 kV 0.0055 ohm Module	Each	1+228,340 $ 5+224,730 $ 10+223,480 $ 25+217,590 $	Half Bridge	-	Dual N Channel	175A	1.2kV	-	0.0055ohm	Module	7Pins	18V	5.15V	-	175°C	62mm C Series
NXH004P120M3F2PTHG	94AK7564 RoHS	ONSEMI Silicon Carbide MOSFET Half Bridge Dual N Channel 284 A 1.2 kV 0.0055 ohm Module	Each	1+260,310 $ 5+249,440 $ 10+238,570 $ 25+227,700 $	Half Bridge	-	Dual N Channel	284A	1.2kV	-	0.0055ohm	Module	36Pins	18V	4.4V	785W	150°C	-
NXH004P120M3F2PTNG	94AK7565 RoHS	ONSEMI Silicon Carbide MOSFET Half Bridge Dual N Channel 338 A 1.2 kV 0.0055 ohm Module	Each	1+292,990 $ 5+282,450 $ 10+271,900 $ 25+261,370 $	Half Bridge	-	Dual N Channel	338A	1.2kV	-	0.0055ohm	Module	36Pins	18V	4.4V	1.098kW	150°C	-
FS05MR12A6MA1BBPSA1	25AJ0837 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET SixPack N Channel 200 A 1.2 kV 0.0055 ohm Module	Each	1+1 973,080 $ 5+1 933,610 $ 10+1 894,150 $ 25+1 854,690 $	SixPack	N Channel	N Channel	200A	1.2kV	0.0055ohm	0.0055ohm	Module	-	-	-	-	150°C	HybridPACK CoolSiC