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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=0.027ohm
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MOSFET Module Configuration
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Channel Type
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Rds(on) Test Voltage
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Drain Source Voltage Vds
(3)
(1)
Operating Temperature Max
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Continuous Drain Current Id
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Transistor Case Style
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No. of Pins
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Gate Source Threshold Voltage Max
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Emballage
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
80AK5509 RoHS | TOSHIBA | Each | 1+35,340 $ 5+33,920 $ 10+32,490 $ 25+31,010 $ 50+29,450 $ Plus de tarifs | Single | N Channel | 58A | 650V | 0.027ohm | TO-247 | 4Pins | 18V | 5V | 156W | 175°C | - | ||||
47AM2255 RoHS | STMICROELECTRONICS | Each (Supplied on Cut Tape) Bandes découpées | 1+22,780 $ 50+14,060 $ 100+13,780 $ 250+13,500 $ 500+13,220 $ Plus de tarifs | Single | N Channel | 55A | 650V | 0.027ohm | H2PAK | 7Pins | 18V | 4.2V | 385W | 175°C | - | ||||
47AM2256 RoHS | STMICROELECTRONICS | Each | 1+22,810 $ 10+17,980 $ 25+17,020 $ 50+16,060 $ 100+15,110 $ Plus de tarifs | Single | N Channel | 55A | 650V | 0.027ohm | HiP247 | 3Pins | 18V | 4.2V | 398W | 200°C | - | ||||
Each | 1+23,900 $ 10+23,030 $ 25+22,150 $ 50+21,100 $ 100+20,030 $ Plus de tarifs | Single | N Channel | 97A | 1.2kV | 0.027ohm | TO-247 | 4Pins | 18V | 5V | 416W | 175°C | mSiC Series | ||||||
