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Silicon Carbide (SiC) MOSFETs & Modules :
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Fabricant
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Drain Source On State Resistance
=0.104ohm
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MOSFET Module Configuration
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Channel Type
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Continuous Drain Current Id
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Drain Source Voltage Vds
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Transistor Case Style
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No. of Pins
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Rds(on) Test Voltage
(2)
Gate Source Threshold Voltage Max
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Power Dissipation
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Emballage
(1)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
11AN5383 RoHS | LITTELFUSE | Each | 1+16,510 $ 10+12,240 $ 25+11,330 $ 50+10,400 $ 100+9,910 $ Plus de tarifs | Single | N Channel | 41A | 1.2kV | 0.104ohm | TO-247 | 4Pins | 18V | 4.5V | 250W | 175°C | ||||
11AN5377 RoHS | LITTELFUSE | Each (Supplied on Cut Tape) Bandes découpées | 1+16,370 $ 50+10,710 $ 100+10,370 $ 250+9,940 $ 500+9,800 $ Plus de tarifs | Single | N Channel | 41A | 1.2kV | 0.104ohm | TO-263 (D2PAK) | 7Pins | 18V | 4.5V | 250W | 175°C | ||||
