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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=0.129ohm
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MOSFET Module Configuration
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Continuous Drain Current Id
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Drain Source Voltage Vds
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Transistor Case Style
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Rds(on) Test Voltage
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
97AK2421 RoHS | Each | 1+11,200 $ 10+9,830 $ 25+8,470 $ 50+7,100 $ 100+6,610 $ Plus de tarifs | Single | N Channel | 16A | 750V | 0.129ohm | TO-247 | 4Pins | 20V | 5.6V | 86W | 175°C | CoolSiC Gen 1 Series | |||||
97AK2011 RoHS | Each | 1+11,680 $ 10+10,260 $ 25+8,830 $ 50+7,420 $ 100+6,920 $ Plus de tarifs | Single | N Channel | 16A | 750V | 0.129ohm | TO-247 | 4Pins | 20V | 5.6V | 86W | 175°C | CoolSiC Gen 1 Series | |||||
