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Silicon Carbide (SiC) MOSFETs & Modules :
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Fabricant
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Drain Source On State Resistance
=11mohm
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(1)
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MOSFET Module Configuration
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Channel Type
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Continuous Drain Current Id
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Drain Source Voltage Vds
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Transistor Case Style
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No. of Pins
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
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Power Dissipation
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Emballage
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+28,610 $ 10+18,270 $ 25+17,670 $ 50+17,070 $ 100+16,480 $ | Single | N Channel | 104A | 750V | 11mohm | TO-247 | 4Pins | 12V | 5.5V | 357W | 175°C | ||||||
Each (Supplied on Cut Tape) Bandes découpées | 1+39,590 $ 10+32,860 $ 25+32,180 $ 50+31,530 $ 100+30,860 $ Plus de tarifs | Single | N Channel | 104A | 750V | 11mohm | D2PAK | 7Pins | 12V | 5.5V | 357W | 175°C | ||||||
