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Silicon Carbide (SiC) MOSFETs & Modules :
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Fabricant
(3)
Drain Source On State Resistance
=18mohm
1
(1)
(1)
(1)
(2)
(1)
(1)
(1)
(2)
MOSFET Module Configuration
(3)
Channel Type
(3)
Continuous Drain Current Id
(1)
(2)
Drain Source Voltage Vds
(3)
Transistor Case Style
(1)
(2)
No. of Pins
(1)
(1)
(1)
Rds(on) Test Voltage
(3)
Gate Source Threshold Voltage Max
(3)
Power Dissipation
(1)
(2)
Emballage
(2)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+18,190 $ 10+10,990 $ | Single | N Channel | 81A | 750V | 18mohm | TO-247 | 3Pins | 12V | 6V | 385W | 175°C | ||||||
Each (Supplied on Cut Tape) Bandes découpées | 1+17,210 $ | Single | N Channel | 53A | 750V | 18mohm | MO-299 | 8Pins | 12V | 6V | 349W | 175°C | ||||||
Each | 1+31,970 $ 5+26,370 $ 10+20,770 $ | Single | N Channel | 81A | 750V | 18mohm | TO-247 | 4Pins | 12V | 6V | 385W | 175°C | ||||||
