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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=1910µohm
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MOSFET Module Configuration
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Channel Type
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Continuous Drain Current Id
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Drain Source Voltage Vds
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Transistor Case Style
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No. of Pins
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
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Operating Temperature Max
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Emballage
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+612,210 $ 5+607,320 $ 10+602,420 $ 25+597,530 $ | Half Bridge | N Channel | 500A | 1.2kV | 1910µohm | Module | 11Pins | 18V | 5.15V | 175°C | EconoDUAL 3 Series | ||||||
22AM2116 RoHS | Each | 1+675,640 $ 5+671,870 $ 10+668,090 $ 25+654,740 $ | Half Bridge | Dual N Channel | 420A | 1.2kV | 1910µohm | Module | 11Pins | 18V | 5.15V | 175°C | EconoDUAL 3 Series | |||||
