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Silicon Carbide (SiC) MOSFETs & Modules :
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Fabricant
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(4)
Drain Source On State Resistance
=23mohm
1
(1)
(1)
(1)
(2)
(1)
(1)
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MOSFET Module Configuration
(5)
Channel Type
(5)
Continuous Drain Current Id
(1)
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(1)
Drain Source Voltage Vds
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Transistor Case Style
(1)
(4)
No. of Pins
(2)
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
(1)
(4)
Power Dissipation
(1)
(2)
(1)
(1)
Emballage
(4)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+28,650 $ 5+28,190 $ 10+27,720 $ 25+27,260 $ | Single | N Channel | 53A | 1.2kV | 23mohm | TO-247 | 4Pins | 12V | 6V | 385W | 175°C | ||||||
Each (Supplied on Cut Tape) Bandes découpées | 1+27,690 $ 10+19,710 $ 25+18,950 $ 50+18,170 $ 100+17,390 $ | Single | N Channel | 64A | 750V | 23mohm | D2PAK | 7Pins | 12V | 6V | 278W | 175°C | ||||||
Each | 1+16,520 $ 10+9,900 $ 25+9,620 $ 50+9,360 $ 100+9,080 $ | Single | N Channel | 66A | 750V | 23mohm | TO-247 | 3Pins | 12V | 6V | 306W | 175°C | ||||||
16AM8165 RoHS | Each | 1+41,450 $ 5+40,630 $ 10+39,810 $ 25+39,400 $ 50+38,980 $ Plus de tarifs | Single | N Channel | 125A | 1.2kV | 23mohm | TO-247 | 3Pins | 18V | 2.9V | 600W | 175°C | |||||
Each | 1+16,520 $ 10+9,900 $ 25+9,620 $ 50+9,360 $ 100+9,080 $ | Single | N Channel | 66A | 750V | 23mohm | TO-247 | 4Pins | 12V | 6V | 306W | 175°C | ||||||
