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Silicon Carbide (SiC) MOSFETs & Modules :
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Fabricant
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Drain Source On State Resistance
=410mohm
1
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(1)
(1)
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MOSFET Module Configuration
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Channel Type
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Continuous Drain Current Id
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Drain Source Voltage Vds
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Transistor Case Style
(2)
No. of Pins
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
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Power Dissipation
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Emballage
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each (Supplied on Cut Tape) Bandes découpées | 1+16,290 $ 10+11,260 $ 25+10,420 $ 50+9,580 $ 100+8,730 $ | Single | N Channel | 7.6A | 1.7kV | 410mohm | D2PAK | 7Pins | 12V | 6V | 100W | 175°C | ||||||
Each (Supplied on Cut Tape) Bandes découpées | 1+12,900 $ 10+8,980 $ 25+8,210 $ 50+7,450 $ 100+6,680 $ Plus de tarifs | Single | N Channel | 7.6A | 1.2kV | 410mohm | D2PAK | 7Pins | 12V | 6V | 100W | 175°C | ||||||
