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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=5.4mohm
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MOSFET Module Configuration
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Drain Source Voltage Vds
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
86AK5002 RoHS | Each | 1+205,460 $ 5+193,820 $ 10+182,170 $ 30+170,530 $ | Half Bridge | N Channel | 145A | 1.2kV | 5.4mohm | Module | 36Pins | 18V | 5.15V | 20mW | 175°C | EasyDUAL 2B CoolSiC Series | |||||
86AK5003 RoHS | Each | 1+239,210 $ 5+227,460 $ 10+215,710 $ 25+203,950 $ | Half Bridge | N Channel | 150A | 1.2kV | 5.4mohm | Module | 36Pins | 18V | 5.15V | 20mW | 150°C | EasyDUAL 2B CoolSiC Series | |||||
