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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
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MOSFET Module Configuration
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Drain Source Voltage Vds
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
08AM4242 RoHS | Each | 1+211,600 $ 5+209,570 $ 10+207,520 $ 25+203,380 $ | Half Bridge | N Channel | 191A | 1.2kV | 8000µohm | PIM | 36Pins | 18V | 4.4V | 556W | 150°C | - | |||||
51AM2050 RoHS | INFINEON | Each | 1+533,750 $ 5+516,390 $ 10+499,020 $ 25+489,040 $ | Half Bridge | Dual N Channel | 195A | 2kV | 8000µohm | Module | 7Pins | 18V | 5.15V | - | 175°C | 62 mm C Series | ||||
