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Silicon Carbide (SiC) MOSFETs & Modules :
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Fabricant
(2)
Gate Source Threshold Voltage Max
=2.38V
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(2)
(1)
(3)
(1)
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(2)
(4)
MOSFET Module Configuration
(2)
Channel Type
(2)
Continuous Drain Current Id
(2)
Drain Source Voltage Vds
(2)
Drain Source On State Resistance
(2)
Transistor Case Style
(2)
No. of Pins
(1)
(1)
Rds(on) Test Voltage
(2)
Power Dissipation
(2)
Emballage
(2)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+43,140 $ 5+38,770 $ 10+34,390 $ 25+33,230 $ 50+32,060 $ Plus de tarifs | Single | N Channel | 49A | 1.2kV | 0.056ohm | TO-247AD | 4Pins | 20V | 2.38V | 227W | 150°C | MaxSiC Series | ||||||
Each | 1+41,900 $ 5+37,660 $ 10+33,400 $ 25+32,260 $ 50+31,140 $ Plus de tarifs | Single | N Channel | 49A | 1.2kV | 0.056ohm | TO-247AD | 3Pins | 20V | 2.38V | 227W | 150°C | MaxSiC Series | ||||||
