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Silicon Carbide (SiC) MOSFETs & Modules :
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Gate Source Threshold Voltage Max
=2.77V
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MOSFET Module Configuration
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Channel Type
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Continuous Drain Current Id
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Drain Source Voltage Vds
(4)
Drain Source On State Resistance
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Transistor Case Style
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No. of Pins
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Rds(on) Test Voltage
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Power Dissipation
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Emballage
(4)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
49AM1336 RoHS | NEXPERIA | Each (Supplied on Full Reel) Bobine complète | 800+13,610 $ 1600+13,210 $ 3200+12,410 $ 4800+11,820 $ | Single | N Channel | 36A | 1.2kV | 0.09ohm | X.PAK | 7Pins | 18V | 2.77V | 167W | 175°C | ||||
49AM1335 RoHS | NEXPERIA | Each (Supplied on Full Reel) Bobine complète | 800+15,990 $ 1600+15,540 $ 3200+14,590 $ 4800+13,910 $ | Single | N Channel | 55A | 1.2kV | 0.06ohm | X.PAK | 7Pins | 18V | 2.77V | 254W | 175°C | ||||
49AM1334 RoHS | NEXPERIA | Each (Supplied on Full Reel) Bobine complète | 800+18,060 $ 1600+17,550 $ 3200+16,990 $ 4800+16,190 $ | Single | N Channel | 68A | 1.2kV | 0.045ohm | X.PAK | 7Pins | 18V | 2.77V | 294W | 175°C | ||||
49AM1333 RoHS | NEXPERIA | Each (Supplied on Full Reel) Bobine complète | 800+29,930 $ 1600+29,020 $ 3200+28,120 $ 4800+26,790 $ | Single | N Channel | 122A | 1.2kV | 0.026ohm | X.PAK | 7Pins | 18V | 2.77V | 517W | 175°C | ||||
