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Silicon Carbide (SiC) MOSFETs & Modules :
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On Resistance Rds(on)
=0.15ohm
1
(2)
(3)
(11)
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(1)
(1)
(1)
(1)
MOSFET Module Configuration
(2)
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(2)
Drain Source Voltage Vds
(2)
Drain Source On State Resistance
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(2)
No. of Pins
(1)
(1)
Rds(on) Test Voltage
(2)
Emballage
(2)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+12,880 $ 10+12,040 $ 25+11,280 $ 50+10,690 $ 100+10,300 $ Plus de tarifs | Single | N Channel | N Channel | 18.4A | 1.2kV | 0.15ohm | 150mohm | TO-247 | 3Pins | 12V | 4.4V | 166.7W | 166.7W | 175°C | ||||||
Each | 1+11,400 $ 10+10,650 $ 25+10,110 $ 50+9,600 $ 100+9,250 $ Plus de tarifs | Single | N Channel | N Channel | 18.4A | 1.2kV | 0.15ohm | 150mohm | TO-247 | 4Pins | 12V | 4.4V | 166.7W | 166.7W | 175°C | ||||||
