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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation Pd
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MOSFET Module Configuration
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Continuous Drain Current Id
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Drain Source Voltage Vds
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On Resistance Rds(on)
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Drain Source On State Resistance
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Emballage
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+612,050 $ 5+599,810 $ 10+587,570 $ 25+575,330 $ | Chopper | N Channel | N Channel | 134A | 1.2kV | - | - | Module | - | - | 4V | 935W | 935W | 150°C | ||||||
Each (Supplied on Cut Tape) Bandes découpées | 1+55,720 $ 50+44,090 $ 100+43,340 $ 250+42,470 $ 500+41,610 $ Plus de tarifs | Single | N Channel | N Channel | 40A | 650V | 0.018ohm | 0.018ohm | PowerFLAT | 5Pins | 18V | 3.2V | 935W | 935W | 175°C | ||||||
