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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
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MOSFET Module Configuration
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Drain Source Voltage Vds
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Drain Source On State Resistance
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Rds(on) Test Voltage
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
59AM1246 RoHS | INFINEON | Each (Supplied on Cut Tape) Bandes découpées | 1+10,460 $ 50+9,420 $ 100+8,960 $ 250+8,090 $ 500+7,450 $ Plus de tarifs | Single | N Channel | 29A | 750V | 0.056ohm | TO-263 (D2PAK) | 7Pins | 20V | 5.6V | 116W | 175°C | CoolSiC G2 Series | ||||
12AN6473 RoHS | Each (Supplied on Cut Tape) Bandes découpées | 1+8,950 $ 50+8,020 $ 100+7,620 $ 250+6,850 $ 500+6,270 $ Plus de tarifs | Single | N Channel | 29A | 750V | 0.056ohm | TO-263 | 7Pins | 20V | 5.6V | 116W | 175°C | CoolSiC G2 Series | |||||
