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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
=132W
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(1)
MOSFET Module Configuration
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Channel Type
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Continuous Drain Current Id
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Drain Source Voltage Vds
(3)
Drain Source On State Resistance
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Transistor Case Style
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No. of Pins
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
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Emballage
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(1)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+25,590 $ 10+24,300 $ 25+23,770 $ 50+22,020 $ 100+21,070 $ Plus de tarifs | Single | N Channel | 40A | 650V | 0.065ohm | TO-247 | 3Pins | 18V | 5V | 132W | 175°C | ||||||
80AK5512 RoHS | TOSHIBA | Each | 1+25,560 $ 10+24,230 $ 25+23,670 $ 50+21,850 $ 100+20,870 $ Plus de tarifs | Single | N Channel | 40A | 650V | 0.048ohm | TO-247 | 4Pins | 18V | 5V | 132W | 175°C | ||||
27AM4911 RoHS | TOSHIBA | Each (Supplied on Cut Tape) Bandes découpées | 1+27,450 $ 50+25,700 $ 100+24,160 $ 250+22,670 $ 500+21,170 $ Plus de tarifs | Single | N Channel | 36A | 650V | 0.081ohm | DFN | 5Pins | 18V | 5V | 132W | 175°C | ||||
