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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
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Drain Source Voltage Vds
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
97AK2419 RoHS | Each | 1+17,390 $ 10+15,400 $ 25+13,410 $ 50+11,420 $ 100+10,720 $ Plus de tarifs | Single | N Channel | 32A | 750V | 0.055ohm | TO-247 | 4Pins | 20V | 5.6V | 144W | 175°C | CoolSiC Gen 1 Series | |||||
97AK2009 RoHS | Each | 1+17,790 $ 10+15,760 $ 25+13,750 $ 50+11,720 $ 100+11,000 $ Plus de tarifs | Single | N Channel | 32A | 750V | 0.055ohm | TO-247 | 4Pins | 20V | 5.6V | 144W | 175°C | CoolSiC Gen 1 Series | |||||
