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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
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MOSFET Module Configuration
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Drain Source Voltage Vds
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Emballage
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
86AK1727 RoHS | Each | 1+14,570 $ 10+10,700 $ 25+9,880 $ 50+9,050 $ 100+8,580 $ Plus de tarifs | Single | N Channel | 36A | 1.2kV | 0.12ohm | TO-247 | 3Pins | 15V | 2.9V | 202W | 175°C | - | |||||
87AK1282 RoHS | Each (Supplied on Cut Tape) Bandes découpées | 1+14,800 $ 50+8,230 $ 100+7,810 $ 250+7,660 $ 500+7,500 $ Plus de tarifs | Single | N Channel | 38A | 1.2kV | 0.075ohm | TO-263HV | 7Pins | 20V | 5.1V | 202W | 175°C | CoolSiC Series | |||||
12AN6483 RoHS | Each | 1+23,060 $ 10+19,610 $ 25+18,770 $ 50+17,950 $ 100+17,110 $ Plus de tarifs | Single | N Channel | 60A | 750V | 0.022ohm | TO-247 | 4Pins | 20V | 5.6V | 202W | 175°C | CoolSiC G2 Series | |||||
12AN6296 RoHS | INFINEON | Each | 1+25,620 $ 10+21,800 $ 25+20,860 $ 50+19,940 $ 100+19,000 $ Plus de tarifs | Single | N Channel | 60A | 750V | 0.022ohm | TO-247 | 4Pins | 20V | 5.6V | 202W | 175°C | CoolSiC G2 Series | ||||
