Fournisseurs populaires
Silicon Carbide (SiC) MOSFETs & Modules :
2 produit(s) trouvé(s)Tous les filtres
(1 Appliqués)
Tout développer
Fabricant
(2)
Power Dissipation
=236W
1
(41)
(1)
(1)
(1)
(2)
(1)
(1)
(1)
MOSFET Module Configuration
(2)
Channel Type
(2)
Continuous Drain Current Id
(2)
Drain Source Voltage Vds
(2)
Drain Source On State Resistance
(2)
Transistor Case Style
(2)
No. of Pins
(2)
Rds(on) Test Voltage
(2)
Gate Source Threshold Voltage Max
(2)
Emballage
(2)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
12AM9888 RoHS | STMICROELECTRONICS | Each | 1+22,360 $ 10+19,490 $ 25+18,300 $ 60+17,090 $ 120+15,890 $ | Single | N Channel | 30A | 1.2kV | 0.087ohm | HiP247 | 4Pins | 18V | 4.2V | 236W | 200°C | ||||
14AM7987 RoHS | Each | 1+15,700 $ 10+9,360 $ 25+9,070 $ 50+8,770 $ 100+8,500 $ | Single | N Channel | 30A | 1.2kV | 0.087ohm | HiP247 | 4Pins | 18V | 4.2V | 236W | 200°C | |||||
