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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
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MOSFET Module Configuration
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Emballage
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each (Supplied on Cut Tape) Bandes découpées | 1+10,330 $ 50+7,300 $ 100+6,060 $ 250+5,820 $ 500+5,590 $ Plus de tarifs | Single | N Channel | 48.1A | 650V | 0.046ohm | HSOF | 8Pins | 20V | 5.6V | 237W | 175°C | CoolSiC Gen 2 Series | ||||||
Each | 1+16,530 $ 10+16,050 $ 25+15,570 $ 50+14,900 $ 100+14,220 $ Plus de tarifs | Single | N Channel | 49A | 1.2kV | 0.06ohm | TO-247 | 4Pins | 18V | 5V | 237W | 175°C | mSiC Series | ||||||
