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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
=550W
1
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(1)
MOSFET Module Configuration
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Channel Type
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Continuous Drain Current Id
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Drain Source Voltage Vds
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Drain Source On State Resistance
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No. of Pins
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
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Emballage
(2)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+52,270 $ 5+50,220 $ 10+47,960 $ 25+45,930 $ 50+43,660 $ Plus de tarifs | Single | N Channel | 150A | 650V | 0.015ohm | TO-247 | 3Pins | 18V | 4V | 550W | 175°C | ||||||
16AM8148 RoHS | Each | 1+51,990 $ 5+49,960 $ 10+47,710 $ 25+45,680 $ 50+43,430 $ Plus de tarifs | Single | N Channel | 150A | 650V | 0.02ohm | TO-247 | 4Pins | 18V | 4V | 550W | 175°C | |||||
