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Silicon Carbide (SiC) MOSFETs & Modules :
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Transistor Case Style
=MO-299
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(1)
MOSFET Module Configuration
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Channel Type
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Continuous Drain Current Id
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Drain Source Voltage Vds
(2)
Drain Source On State Resistance
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No. of Pins
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
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Power Dissipation
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Emballage
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each (Supplied on Cut Tape) Bandes découpées | 1+17,210 $ | Single | N Channel | 53A | 750V | 18mohm | MO-299 | 8Pins | 12V | 6V | 349W | 175°C | ||||||
Each | 1+42,390 $ 5+36,800 $ 10+31,210 $ 25+31,130 $ 50+31,040 $ Plus de tarifs | Single | N Channel | 106A | 750V | 8.6mohm | MO-299 | 8Pins | 12V | 5.5V | 600W | 175°C | ||||||
