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Silicon Carbide (SiC) MOSFETs & Modules :
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
15AN5311 RoHS | Each (Supplied on Cut Tape) Bandes découpées | 1+17,780 $ 50+16,410 $ 100+15,220 $ 250+14,060 $ 500+12,880 $ Plus de tarifs | Single | N Channel | 68A | 1.2kV | 0.045ohm | QDPAK-EP | 22Pins | 18V | 2.9V | 313W | 175°C | |||||
15AN5312 RoHS | Each (Supplied on Cut Tape) Bandes découpées | 1+16,970 $ 50+15,290 $ 100+14,550 $ 250+13,130 $ 500+12,080 $ Plus de tarifs | Single | N Channel | 50A | 1.2kV | 0.06ohm | QDPAK-EP | 22Pins | 18V | 2.9V | 217W | 175°C | |||||
15AN5313 RoHS | Each (Supplied on Cut Tape) Bandes découpées | 1+14,420 $ 50+12,990 $ 100+12,360 $ 250+11,160 $ 500+10,280 $ Plus de tarifs | Single | N Channel | 33A | 1.2kV | 0.09ohm | QDPAK-EP | 22Pins | 18V | 2.9V | 152W | 175°C | |||||
15AN5310 RoHS | NEXPERIA | Each (Supplied on Cut Tape) Bandes découpées | 1+29,440 $ 50+27,170 $ 100+25,200 $ 250+23,270 $ 500+21,340 $ Plus de tarifs | Single | N Channel | 111A | 1.2kV | 0.026ohm | QDPAK-EP | 22Pins | 18V | 2.9V | 469W | 175°C | ||||
