Silicon Carbide (SiC) MOSFETs & Modules | Newark Électronique Canada

Réf. fabricant	Code Commande	Fabricant / Description	Prix pour	Prix	MOSFET Module Configuration	Transistor Polarity	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	On Resistance Rds(on)	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation Pd	Power Dissipation	Operating Temperature Max

UF3C065040T3S	47AK1752 Data Sheet RoHS Date/Lot Code	ONSEMI Silicon Carbide MOSFET Single N Channel 54 A 650 V 42 mohm TO-220	Each	1+19,020 $ 10+17,780 $ 25+16,890 $ 50+16,000 $ 100+15,430 $ Plus de tarifs	Single	N Channel	N Channel	54A	650V	0.042ohm	42mohm	TO-220	3Pins	12V	5V	326W	326W	175°C
UF3C065030T3S	47AK1748 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 85 A 650 V 27 mohm TO-220	Each	1+24,910 $ 5+23,830 $ 10+22,760 $ 25+21,660 $ 50+20,170 $ Plus de tarifs	Single	N Channel	N Channel	85A	650V	0.027ohm	27mohm	TO-220	3Pins	12V	5V	441W	441W	175°C
UF3C065080T3S	47AK1756 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 31 A 650 V 0.08 ohm TO-220	Each	1+9,040 $ 10+8,500 $ 25+8,040 $ 50+7,680 $ 100+7,360 $ Plus de tarifs	Single	N Channel	N Channel	31A	650V	0.08ohm	0.08ohm	TO-220	3Pins	12V	5V	190W	190W	175°C
UJ3C065080T3S	47AK1773 Data Sheet RoHS	ONSEMI SILICON CARBIDE MOSFET SINGLE	Each	1+8,980 $ 10+8,400 $ 25+7,800 $ 50+7,270 $ 100+6,730 $ Plus de tarifs	Single	N Channel	N Channel	31A	650V	0.08ohm	0.08ohm	TO-220	3Pins	12V	5V	190W	190W	175°C
UJ3C065030T3S	47AK1770 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 85 A 650 V 27 mohm TO-220	Each	1+24,910 $ 5+23,830 $ 10+22,760 $ 25+21,660 $ 50+20,170 $ Plus de tarifs	Single	N Channel	N Channel	85A	650V	0.027ohm	27mohm	TO-220	3Pins	12V	5V	441W	441W	175°C