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VTP100H
Photodiode, 70 °, 30 nA, 925 nm, Through Hole-2
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 9 semaine(s)
Informations produit
FabricantEXCELITAS TECH
Réf. FabricantVTP100H
Code Commande66K5713
Fiche technique
No. of Pins2Pins
Diode Case StyleThrough Hole
Wavelength of Peak Sensitivity925nm
Angle of Half Sensitivity ±70°
Dark Current0.03µA
Operating Temperature Min-40°C
Operating Temperature Max100°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCTo Be Advised
Aperçu du produit
The VTP100H is a Silicon Photodiode features an excellent response in the IR region and well matched to IR LEDs. Fast response silicon photodiode in a side-looking package with visible filtering (blocking) having a 7.45mm² active area designed for spectral response between 725 and 1150nm. This series of photodiode has been designed for low junction capacitance to achieve faster response time. This photodiodes is suitable for operation under reverse bias, which increases the speed of response, can also be used in photovoltaic mode.
- IR spectral range
- Medium size active area
- 1 to 2% Linearity over 7 to 9 decades
- Low dark current
- High shunt resistance
- Low capacitance
- Fast response
- Wide field of view
Applications
Sensing & Instrumentation, Metering, Security
Spécifications techniques
No. of Pins
2Pins
Wavelength of Peak Sensitivity
925nm
Dark Current
0.03µA
Operating Temperature Max
100°C
Automotive Qualification Standard
-
SVHC
To Be Advised
Diode Case Style
Through Hole
Angle of Half Sensitivity ±
70°
Operating Temperature Min
-40°C
Product Range
-
MSL
-
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
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Certificat de conformité du produit