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FQP30N06L
Power MOSFET, N Channel, 60 V, 32 A, 0.035 ohm, TO-220AB, Through Hole
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Modèle arrêté
Informations produit
FabricantONSEMI
Réf. FabricantFQP30N06L
Code Commande20C4477
Fiche technique
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id32A
Drain Source On State Resistance0.035ohm
On Resistance Rds(on)0.027ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd79W
Transistor Case StyleTO-220AB
Gate Source Threshold Voltage Max2.5V
Power Dissipation79W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCLead
Aperçu du produit
The FQP30N06L is a QFET® N-channel enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength.
- Low gate charge
- 100% Avalanche tested
- Low crss (typical 50pF)
- ±20V Gate-source voltage
Applications
Power Management, Motor Drive & Control
Spécifications techniques
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.035ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
79W
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
32A
On Resistance Rds(on)
0.027ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220AB
Power Dissipation
79W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Documents techniques (3)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Y-Ex
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :Lead
Télécharger le certificat de conformité du produit
Certificat de conformité du produit