NV6522-RA
Power IC, GaNsafe, 11 to 18V, -40 °C to 150 °C, TOLL-16
| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 1 | 40,190 $ | 40,19 $ |
| Total Prix | 40,19 $ | ||
| Quantité | Prix |
|---|---|
| 1+ | 40,190 $ |
| 50+ | 32,130 $ |
| 100+ | 31,490 $ |
| 250+ | 30,840 $ |
| 500+ | 30,200 $ |
| 1000+ | 29,550 $ |
| 2500+ | 28,920 $ |
| 5000+ | 28,280 $ |
Informations produit
Aperçu du produit
NV6522-RA is a power IC. It is a thermally-enhanced top-cooled SMD version of the GaNFast™ power IC family, optimized for higher power systems using GaNSafe™ technology, making it the ideal choice for high-frequency, high-power-density, and high efficiency power systems in data center, solar, industrial, and automotive segments. The GaNFast power IC integrates GaN FET(s) with gate drive to create an easy-to-use power stage building block. The GaNSafe technology further integrates critical protection and performance features that enable unprecedented reliability and robustness. Applications/topologies include AC-DC, DC-DC, CCM or CrM TP-PFC, optimized for synchronous half-bridge, full bridge, 3-phase, or buck/boost operation, data center CRPS, and solar inverter/ESS, EV OBC and DC-DC converter, and motor drive.
- Paralleling capability up to 2x power ICs
- Zero reverse-recovery charge, 2kV ESD all pins
- Turn-ON and Turn-OFF dV/dt programmability
- VDS: 650V continuous / 800V transient
- Drain-source leakage current is 2.0µA typ at VDS = 650V, VDRIVE = 0V
- Drain-source resistance is 40mohm typ at VDRIVE = 15V, IDS = 13A
- JEDEC and IPC-9701 qualifications
- dV/dt immunity up to 100V/ns
- TOLT-16L top-cooled SMD package
- Junction temperature range from -40 to +150°C
Spécifications techniques
GaNsafe Power IC
18V
16Pins
150°C
-
To Be Advised
11V
TOLL
-40°C
GaNSafe Series
MSL 3 - 168 hours
Documents techniques (1)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit