BSC010N04LSATMA1
Power MOSFET, N Channel, 40 V, 100 A, 0.001 ohm, TDSON, Surface Mount
Vous en voulez davantage ?
| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 1 | 4,400 $ | 4,40 $ |
| Total Prix | 4,40 $ | ||
| Quantité | Prix |
|---|---|
| 1+ | 4,400 $ |
| 10+ | 2,840 $ |
| 25+ | 2,650 $ |
| 50+ | 2,450 $ |
| 100+ | 2,260 $ |
| 250+ | 2,100 $ |
| 500+ | 1,950 $ |
| 1000+ | 1,880 $ |
Informations produit
Aperçu du produit
The BSC010N04LS is a 40V N-channel Power MOSFET optimized for synchronous rectification. This MOSFET features not only the industry's lowest RDS (on) but also a perfect switching behaviour for fast switching applications. 15% lower RDS (on) and 31% lower Figure of Merit (RDS (on) x Qg) compared to alternative devices has been realized by advanced thin wafer technology. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
- Highest system efficiency
- Less paralleling required
- Increased power density
- Saving space
- Very low voltage overshoot
- Superior thermal resistance
Spécifications techniques
N Channel
40V
850µohm
TDSON
10V
2V
8Pins
-
MSL 1 - Unlimited
N Channel
100A
0.001ohm
Surface Mount
139W
139W
150°C
-
No SVHC (25-Jun-2025)
Documents techniques (3)
Produits de remplacement pour BSC010N04LSATMA1
5 produit(s) trouvé(s)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit