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BSC150N03LDGATMA1
Power MOSFET, N Channel, 30 V, 20 A, 0.015 ohm, PG-TSDSON, Surface Mount
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FabricantINFINEON
Réf. FabricantBSC150N03LDGATMA1Copie
Code Commande60R2516
Egalement appeléBSC150N03LD G, SP000359362
Votre numéro de pièce
2 144 En Stock
| Quantité | Prix |
|---|---|
| 1+ | 1,870 $ |
| 10+ | 1,170 $ |
| 100+ | 0,766 $ |
| 500+ | 0,609 $ |
| 1000+ | 0,540 $ |
| 2500+ | 0,506 $ |
| 10000+ | 0,420 $ |
Prix pour :Each
Minimum: 1
Multiple: 1
1,87 $
Note à la ligne
Ajouté à votre confirmation de commande, à votre facture et à votre note d’expédition pour cette commande uniquement.
Informations produit
FabricantINFINEON
Réf. FabricantBSC150N03LDGATMA1Copie
Code Commande60R2516
Egalement appeléBSC150N03LD G, SP000359362
Fiche technique
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id20A
Drain Source On State Resistance0.015ohm
On Resistance Rds(on)0.0125ohm
Transistor Case StylePG-TDSON
Transistor MountingSurface Mount
Power Dissipation Pd26W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation26W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Aperçu du produit
The BSC150N03LD G is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life. It is available in half-bridge configuration.
- Easy to design in
- Increased battery lifetime
- Improved EMI behaviour making external snubber networks obsolete
- Saving space
- Reducing power losses
- Dual N-channel, logic level
- Fast switching MOSFETs for SMPS
- Optimized technology for DC-to-DC converters
- Qualified according to JEDEC for target applications
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance RDS (ON)
- Superior thermal resistance
- 100% Avalanche tested
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, LED Lighting, Computers & Computer Peripherals, Portable Devices, Consumer Electronics
Spécifications techniques
Channel Type
N Channel
Continuous Drain Current Id
20A
On Resistance Rds(on)
0.0125ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
26W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.015ohm
Transistor Case Style
PG-TDSON
Power Dissipation Pd
26W
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Documents techniques (3)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (25-Jun-2025)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit
Traçabilité des produits