IPB107N20N3GATMA1
Power MOSFET, N Channel, 200 V, 88 A, 0.0107 ohm, TO-263 (D2PAK), Surface Mount
| Quantité | Prix |
|---|---|
| 1+ | 6,250 $ |
| 10+ | 5,220 $ |
Informations produit
Aperçu du produit
The IPB107N20N3 G is a 200V N-channel Power MOSFET ideally suited for high-frequency switching, achieving excellent performance in applications such as synchronous rectification for AC-DC SMPS and motor control. The OptiMOS™ MOSFET is optimized for hard commutation ruggedness, achieving low Qrr and lower peak reverse recovery charges. It is performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
- Highest efficiency
- Highest power density
- Lowest board space consumption
- Minimal device paralleling required
- System cost improvement
- Environmentally-friendly
- Easy to design in
Applications
Power Management, Motor Drive & Control, Lighting, Industrial, Audio, LED Lighting
Spécifications techniques
N Channel
200V
0.0107ohm
TO-263 (D2PAK)
300W
3V
3Pins
-
MSL 1 - Unlimited
N Channel
88A
0.0096ohm
Surface Mount
10V
300W
175°C
-
No SVHC (21-Jan-2025)
Documents techniques (4)
Produits de remplacement pour IPB107N20N3GATMA1
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Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit