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IPB60R165CPATMA1
Power MOSFET, N Channel, 650 V, 21 A, 0.165 ohm, TO-263 (D2PAK), Surface Mount
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FabricantINFINEON
Réf. FabricantIPB60R165CPATMA1Copie
Délai d’approvisionnement standard du fabricant8 semaines
Code Commande33P7134
Egalement appeléIPB60R165CP, SP000096439
Votre numéro de pièce
1 107 En Stock
| Quantité | Prix |
|---|---|
| 1+ | 7,190 $ |
| 10+ | 4,770 $ |
| 25+ | 4,310 $ |
| 50+ | 3,840 $ |
| 100+ | 3,380 $ |
| 250+ | 3,170 $ |
| 500+ | 2,950 $ |
| 1000+ | 2,770 $ |
Prix pour :Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
7,19 $
Note à la ligne
Ajouté à votre confirmation de commande, à votre facture et à votre note d’expédition pour cette commande uniquement.
Informations produit
FabricantINFINEON
Réf. FabricantIPB60R165CPATMA1Copie
Délai d’approvisionnement standard du fabricant8 semaines
Code Commande33P7134
Egalement appeléIPB60R165CP, SP000096439
Fiche technique
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id21A
Drain Source On State Resistance0.165ohm
On Resistance Rds(on)0.15ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd192W
Gate Source Threshold Voltage Max3V
Power Dissipation192W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Aperçu du produit
The IPB60R165CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. It is specially designed for hard switching topologies for server and telecom.
- Low figure-of-merit(FOM) RON x Qg
- Extreme dV/dt rated
- High peak current capability
- Qualified according to JEDEC for target applications
- Ultra low RDS (ON)
- Very fast switching
- Internal Rg very low
- High current capability
- Significant reduction of conduction and switching losses
- High power density and efficiency for superior power conversion systems
- Best-in-class performance ratio
Applications
Industrial, Power Management, Communications & Networking, Consumer Electronics, Alternative Energy
Spécifications techniques
Channel Type
N Channel
Continuous Drain Current Id
21A
On Resistance Rds(on)
0.15ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
192W
Power Dissipation
192W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.165ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Documents techniques (2)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (25-Jun-2025)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit