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IRF1104PBF
MOSFET, N TO-220 TUBE 50
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
FabricantINFINEON
Réf. FabricantIRF1104PBFCopie
Délai d’approvisionnement standard du fabricant12 semaines
Code Commande64AH3715
Gamme de produitHEXFET Series
Votre numéro de pièce
14 636 En Stock
Disponible jusqu à épuisement du stock
| Quantité | Prix |
|---|---|
| 1+ | 1,780 $ |
| 10+ | 1,460 $ |
| 100+ | 1,440 $ |
| 500+ | 1,410 $ |
| 1000+ | 1,190 $ |
| 2500+ | 1,170 $ |
| 5000+ | 1,150 $ |
Prix pour :Each
Minimum: 1
Multiple: 1
1,78 $
Note à la ligne
Ajouté à votre confirmation de commande, à votre facture et à votre note d’expédition pour cette commande uniquement.
Informations produit
FabricantINFINEON
Réf. FabricantIRF1104PBFCopie
Délai d’approvisionnement standard du fabricant12 semaines
Code Commande64AH3715
Gamme de produitHEXFET Series
Fiche technique
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id100A
Drain Source On State Resistance9000µohm
On Resistance Rds(on)0.009ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation170W
Power Dissipation Pd170W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Aperçu du produit
IRF1104PBF is a HEXFET® Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- Dynamic dv/dt rating
- Fast switching, fully avalanche rated
- Drain-to-source breakdown voltage is 40V (max, VGS = 0V, ID = 250µA)
- Breakdown voltage temp coefficient is 0.038V/°C (typ, 25°C, ID = 1mA)
- Gate threshold voltage range from 2.0 to 4.0V (VDS = VGS, ID = 250µA)
- Forward transconductance is 37S (max, VDS = 25V, ID = 60A)
- Drain-to-source leakage current is 25µA (typ, VDS = 40V, VGS = 0V)
- Total gate charge is 93nC (max, ID = 60A, TJ = 25°C)
- Turn-on delay time is 15ns (typ, VDD = 20V, TJ = 25°C)
- TO-220 package, operating and storage temperature range from -55 to +175°C
Spécifications techniques
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
9000µohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
170W
No. of Pins
3Pins
Product Range
HEXFET Series
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Continuous Drain Current Id
100A
On Resistance Rds(on)
0.009ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
170W
Operating Temperature Max
175°C
Qualification
-
Documents techniques (2)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (21-Jan-2025)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit