IRF530NSTRLPBF
Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-263 (D2PAK), Surface Mount
| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 1 | 4,200 $ | 4,20 $ |
| Total Prix | 4,20 $ | ||
| Quantité | Prix |
|---|---|
| 1+ | 4,200 $ |
| 50+ | 2,240 $ |
| 100+ | 2,060 $ |
| 250+ | 2,020 $ |
| 500+ | 1,970 $ |
| 1000+ | 1,930 $ |
| 2500+ | 1,890 $ |
| 5000+ | 1,850 $ |
Informations produit
Aperçu du produit
The IRF530NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Fast switching
- Fully avalanche rating
Spécifications techniques
N Channel
100V
0.09ohm
TO-263 (D2PAK)
70W
4V
3Pins
-
MSL 1 - Unlimited
N Channel
17A
0.09ohm
Surface Mount
10V
70W
175°C
-
No SVHC (25-Jun-2025)
Documents techniques (1)
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Législation et Questions environnementales
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