IRF7342TRPBF
Dual MOSFET, P Channel, 55 V, 55 V, 3.4 A, 3.4 A, 0.095 ohm
| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 1 | 2,350 $ | 2,35 $ |
| Total Prix | 2,35 $ | ||
| Quantité | Prix |
|---|---|
| 1+ | 2,350 $ |
| 50+ | 1,110 $ |
| 100+ | 0,992 $ |
| 250+ | 0,887 $ |
| 500+ | 0,780 $ |
| 1000+ | 0,765 $ |
| 2500+ | 0,749 $ |
| 5000+ | 0,733 $ |
Informations produit
Aperçu du produit
The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Applications
Industrial, Power Management
Spécifications techniques
P Channel
3.4A
55V
3.4A
0.095ohm
8Pins
2W
-
-
55V
55V
3.4A
0.095ohm
SOIC
2W
150°C
-
No SVHC (25-Jun-2025)
Documents techniques (4)
Produits associés
6 produit(s) trouvé(s)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit