IRF7389TRPBF
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 7.3 A, 7.3 A, 0.023 ohm
| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 5 | 1,970 $ | 9,85 $ |
| Total Prix | 9,85 $ | ||
| Quantité | Prix |
|---|---|
| 5+ | 1,970 $ |
| 10+ | 1,240 $ |
| 15+ | 1,130 $ |
| 25+ | 1,030 $ |
| 50+ | 0,920 $ |
| 125+ | 0,817 $ |
| 250+ | 0,801 $ |
| Quantité | Prix |
|---|---|
| 4000+ | 0,487 $ |
| 12000+ | 0,434 $ |
| 20000+ | 0,425 $ |
Informations produit
Aperçu du produit
The IRF7389TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Complimentary half bridge
- Surface-mount device
- Fully avalanche rated
Applications
Industrial, Power Management
Spécifications techniques
Complementary N and P Channel
30V
30V
7.3A
0.023ohm
8Pins
2.5W
-
MSL 1 - Unlimited
7.3A
30V
7.3A
0.023ohm
SOIC
2.5W
150°C
-
No SVHC (25-Jun-2025)
Documents techniques (3)
Produits associés
3 produit(s) trouvé(s)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit