IRFB5615PBF
Power MOSFET, N Channel, 150 V, 35 A, 0.039 ohm, TO-220AB, Through Hole
| Quantité | Prix |
|---|---|
| 1+ | 3,350 $ |
| 10+ | 2,120 $ |
| 100+ | 1,460 $ |
| 500+ | 1,190 $ |
| 1000+ | 1,100 $ |
| 3000+ | 0,998 $ |
| 10000+ | 0,978 $ |
Informations produit
Aperçu du produit
The IRFB5615PBF is a 150V single N-channel Digital Audio HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. It is specially designed for class D audio amplifier applications. Gate charge, body diode reverse recovery and internal gate resistance are optimized to improve audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. It features combine to make this MOSFET a highly efficient, robust and reliable device for class-D audio amplifier applications.
- Key parameters optimized for class-D audio
- Amplifier applications
- Low RDS (ON) for improved efficiency
- Low QG and QSW for better THD and improved efficiency
- Low QRR for better THD and lower EMI
- Can deliver up to 300W per channel into 4Ω load in half-bridge configuration amplifier
- 175°C Operating junction temperature for ruggedness
Spécifications techniques
N Channel
150V
0.032ohm
TO-220AB
10V
3V
3Pins
-
-
N Channel
35A
0.039ohm
Through Hole
144W
144W
175°C
-
No SVHC (25-Jun-2025)
Documents techniques (2)
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