
| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 1 | 1,310 $ | 1,31 $ |
| Total Prix | 1,31 $ | ||
| Quantité | Prix |
|---|---|
| 1+ | 1,310 $ |
| 50+ | 0,848 $ |
| 100+ | 0,581 $ |
| 250+ | 0,523 $ |
| 500+ | 0,464 $ |
| 1000+ | 0,427 $ |
| 2500+ | 0,386 $ |
| 5000+ | 0,348 $ |
Informations produit
Aperçu du produit
The IRLL014NTRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1W is possible in a typical surface-mount application.
- Advanced process technology
- Dynamic dV/dt rating
- Fast switching
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Logic level
Applications
Power Management
Spécifications techniques
N Channel
55V
0.14ohm
SOT-223
10V
2V
4Pins
-
-
N Channel
2A
0.14ohm
Surface Mount
2.1W
1W
150°C
-
Lead (25-Jun-2025)
Documents techniques (2)
Produits de remplacement pour IRLL014NTRPBF
1 produit trouvé
Produits associés
2 produit(s) trouvé(s)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit
