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S29GL512S11DHIV23
Flash Memory, Parallel NOR, 512 Mbit, 32M x 16bit, Parallel, FBGA, 64 Pins
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FabricantINFINEON
Réf. FabricantS29GL512S11DHIV23Copie
Délai d’approvisionnement standard du fabricant16 semaines
Code Commande86AK7852
Gamme de produit3V Parallel NOR Flash Memories
Votre numéro de pièce
2 168 En Stock
| Quantité | Prix |
|---|---|
| 1+ | 18,940 $ |
| 10+ | 17,780 $ |
| 25+ | 17,320 $ |
| 50+ | 16,950 $ |
| 100+ | 16,600 $ |
| 250+ | 16,110 $ |
| 500+ | 15,770 $ |
| 1000+ | 15,060 $ |
Prix pour :Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
18,94 $
Note à la ligne
Ajouté à votre confirmation de commande, à votre facture et à votre note d’expédition pour cette commande uniquement.
Informations produit
FabricantINFINEON
Réf. FabricantS29GL512S11DHIV23Copie
Délai d’approvisionnement standard du fabricant16 semaines
Code Commande86AK7852
Gamme de produit3V Parallel NOR Flash Memories
Fiche technique
Flash Memory TypeParallel NOR
Memory Density512Mbit
Memory Configuration32M x 16bit
InterfacesParallel
IC Case / PackageFBGA
No. of Pins64Pins
Clock Frequency Max-
Access Time110ns
Supply Voltage Min2.7V
Supply Voltage Max3.6V
Supply Voltage Nom3V
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max85°C
Product Range3V Parallel NOR Flash Memories
SVHCNo SVHC (25-Jun-2025)
Aperçu du produit
S29GL512S11DHIV23 is a MIRRORBIT™ Eclipse flash product fabricated on 65nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. This features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes this device ideal for today’s embedded applications that require higher density, better performance, and lower power consumption.
- 110ns random access time
- CMOS 3.0V core with versatile I/O, 65nm MIRRORBIT™ Eclipse technology
- Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
- ×16 data bus, asynchronous 32-byte page read
- Programming in page multiples, up to a maximum of 512 bytes
- Automatic error checking and correction – internal hardware ECC with single bit error correction
- Suspend and resume commands for program and erase operations
- Status register, data polling, and ready/busy pin methods to determine device status
- Volatile and non-volatile protection methods for each sector
- Fortified ball-grid array package (LAE064), industrial temperature range from -40°C to +85°C
Spécifications techniques
Flash Memory Type
Parallel NOR
Memory Configuration
32M x 16bit
IC Case / Package
FBGA
Clock Frequency Max
-
Supply Voltage Min
2.7V
Supply Voltage Nom
3V
Operating Temperature Min
-40°C
Product Range
3V Parallel NOR Flash Memories
Memory Density
512Mbit
Interfaces
Parallel
No. of Pins
64Pins
Access Time
110ns
Supply Voltage Max
3.6V
IC Mounting
Surface Mount
Operating Temperature Max
85°C
SVHC
No SVHC (25-Jun-2025)
Documents techniques (1)
Législation et Questions environnementales
US ECCN:3A991B1A
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (25-Jun-2025)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit