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IXFN55N50F
Bipolar (BJT) Single Transistor, N Channel, 55 A, 500 V, 85 mohm, 10 V, 5.5 V
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Modèle arrêté
Informations produit
FabricantIXYS RF
Réf. FabricantIXFN55N50FCopie
Code Commande42M1930
Fiche technique
Channel TypeN Channel
Continuous Drain Current Id55A
Drain Source Voltage Vds500V
Drain Source On State Resistance85mohm
Power Dissipation Pd600W
Operating Frequency Min-
Rds(on) Test Voltage10V
Operating Frequency Max500kHz
Gate Source Threshold Voltage Max5.5V
Transistor Case StyleSOT-227B
Power Dissipation600W
Operating Temperature Max150°C
Product Range-
MSL-
SVHCNo SVHC (12-Jan-2017)
Aperçu du produit
The IXFN55N50F is a N-channel Power MOSFET offers low package inductance hence easy to drive and to protect. It is designed for use with DC-to-DC converters, SMPS/RMPS, DC choppers, pulse generation and laser driver applications.
- RF capable MOSFET
- Enhancement-mode
- Double metal process for low gate resistance
- Rugged polysilicon gate cell structure
- Unclamped inductive switching rated
- Easy to mount
- Space savings
- High power density
Applications
Industrial, Power Management
Spécifications techniques
Channel Type
N Channel
Drain Source Voltage Vds
500V
Power Dissipation Pd
600W
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5.5V
Power Dissipation
600W
Product Range
-
SVHC
No SVHC (12-Jan-2017)
Continuous Drain Current Id
55A
Drain Source On State Resistance
85mohm
Operating Frequency Min
-
Operating Frequency Max
500kHz
Transistor Case Style
SOT-227B
Operating Temperature Max
150°C
MSL
-
Documents techniques (2)
Législation et Questions environnementales
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:À déterminer
SVHC :No SVHC (12-Jan-2017)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit